JDL-1060
Laser Diode Bar, 1060nm, Unmounted
Key Features:
- Wavelength: 1060nm
- Output power up to 350W
- Operation mode: CW and QCW
- Highest quality: We strictly monitor the production of our semiconductor products in clearly defined processes.
- Reliable Power: High, reliable output power, and ideal beam characteristics.
- Economical: Our semiconductors are very efficient and are characterized by a long service life.
There are many configurations and options available. If you do not see exactly what you need below, please contact us!
POPULAR CONFIGURATIONS:
Picture |
Part Number |
Part Description |
Datasheet |
Price |
Lead Time |
|
---|---|---|---|---|---|---|
JDL-BAE-17-090-1060-TE-10-4.0 |
Unmounted Laser Diode Single Emitter, 1060nm, 10W, 90um emitter, 4mm Cavity Length |
8+ weeks |
Get Quote | |||
JDL-BAB-30-19-1060-TE-40-1.0 |
Unmounted Laser Diode Bar, 1060nm, 40W, 30% Fill Factor, 150um Emitters / 500um Pitch, 1mm Cavity Length |
8+ weeks |
Get Quote | |||
JDL-BAB-30-19-1060-TE-60-1.5 |
Unmounted Laser Diode Bar, 1060nm, 60W, 30% Fill Factor, 150um Emitters / 500um Pitch, 1.5mm Cavity Length |
8+ weeks |
Get Quote | |||
JDL-BAB-20-19-1060-TE-80-2.0 |
Unmounted Laser Diode Bar, 1060nm, 80W, 20% Fill Factor, 100um Emitters / 500um Pitch, 2mm Cavity Length |
8+ weeks |
Get Quote | |||
JDL-BAB-50-23-1060-TE-120-2.0 |
Unmounted Laser Diode Bar, 1060nm, 120W, 50% Fill Factor, 100um Emitters / 200um Pitch, 2mm Cavity Length |
8+ weeks |
Get Quote | |||
JDL-BAB-50-23-1060-TE-200-4.0 |
Unmounted Laser Diode Bar, 1060nm, 200W, 50% Fill Factor, 100um Emitters / 200um Pitch, 4mm Cavity Length |
8+ weeks |
Get Quote | |||
JDL-BAB-50-47-1060-TE-250-1.5 |
Unmounted Laser Diode Bar, 1060nm, 250W, 50% Fill Factor, 100um Emitters / 200um Pitch, 1.5mm Cavity Length |
8+ weeks |
Get Quote | |||
JDL-BAB-75-37-1060-TE-350-1.5 |
Unmounted Laser Diode Bar, 1060nm, 350W, QCW, 75% Fill Factor, 190um Emitters / 200um Pitch, 1.5mm Cavity Length |
8+ weeks |
Get Quote |
The JDL-1060 is a high-power, 1060nm, unmounted diode laser bar, with a QCW output power up to 350W, designed for the most demanding applications. They are extremely reliable, efficient, and durable.
Our semiconductor products are easily assembled using standard soldering methods. The material supports both soft solder (indium) and hard solder (gold/tin). We deliver our laser bars to you with emitter structures separated on the p-side as standard. On request, we can also produce bars with continuous p-side metallization and adapted facet coatings, using low AR coatings for the assembly of external resonators.
Our Capabilities include:
- InGaAs-based semiconductors
- Optical output power: 8 watts to 300 watts CW and 500 watts QCW
- Standard wavelengths: 760 to 1070 nanometers (others available on request)
- Fill factors: 10%, 20%, 30%, 50%, 75% (others available on request)
- Resonator lengths: 0.6 mm, 1.0 mm, 1.5 mm, 2.0 mm, 3.5 mm, 4.0 mm (others available on request)
- Optional: low AR coating (typically < 0.3%)
- Optional: continuous metallization