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The output wavelength of a semiconductor laser is based on the difference in energy between the valance and conduction bands of the material (bandgap energy). Since the energy of a photon is inversely proportional to its wavelength, this means that a larger bandgap energy will result in a shorter emission wavelength. Due to the relatively wide bandgap energy of 3.4 eV, gallium nitride (GaN) is ideal for the production of semiconductor optoelectronic devices, producing blue wavelength light without the need for nonlinear crystal harmonic generation. Since the mid-’90s, GaN substrates have been the common material utilized for blue LEDs. In recent years, GaN based laser technology has provided blue, green and UV laser diodes, now available in wavelengths from 375 nm to 521 nm, with output powers exceeding 100 watts. Read our article, titled “Gallium Nitride (GaN) Laser Diodes: Green, Blue, and UV Wavelengths” to learn more about GaN Based Laser Diodes, available through RPMC. Get more information from our Lasers 101, Blogs, Whitepapers, and FAQs pages in our Knowledge Center!
The output wavelength of a semiconductor laser is based on the difference in energy between the valance and conduction bands of the material (bandgap energy). Since the energy of a photon is inversely proportional to its wavelength, this means that a larger bandgap energy will result in a shorter emission wavelength. Due to the relatively wide bandgap energy of 3.4 eV, gallium nitride (GaN) is ideal for the production of semiconductor optoelectronic devices, producing blue wavelength light without the need for nonlinear crystal harmonic generation. Since the mid-’90s, GaN substrates have been the common material utilized for blue LEDs. In recent years, GaN based laser technology has provided blue, green and UV laser diodes, now available in wavelengths from 375 nm to 521 nm, with output powers exceeding 100 watts.